A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping

Chi Chang Wu, Fu Hsiang Ko, Wen Luh Yang, Hsin Chiang You, Fu Ken Liu, Chen Chih Yeh, Pin Lin Liu, Chiou Kou Tung, Ching Hwa Cheng

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A new solgel-derived TixZrySizO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 106 s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.

Original languageEnglish
Article number5466227
Pages (from-to)746-748
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number7
DOIs
Publication statusPublished - Jul 2010

Fingerprint

Nanocrystals
Data storage equipment
Rapid thermal annealing
Extrapolation
Zirconium
Electron energy levels
Electric properties
Durability
Titanium
Silicon
Temperature

Keywords

  • Flash memory
  • hole trapping
  • nanocrystal (NC)
  • sol-gel

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Wu, C. C., Ko, F. H., Yang, W. L., You, H. C., Liu, F. K., Yeh, C. C., ... Cheng, C. H. (2010). A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping. IEEE Electron Device Letters, 31(7), 746-748. [5466227]. https://doi.org/10.1109/LED.2010.2048193

A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping. / Wu, Chi Chang; Ko, Fu Hsiang; Yang, Wen Luh; You, Hsin Chiang; Liu, Fu Ken; Yeh, Chen Chih; Liu, Pin Lin; Tung, Chiou Kou; Cheng, Ching Hwa.

In: IEEE Electron Device Letters, Vol. 31, No. 7, 5466227, 07.2010, p. 746-748.

Research output: Contribution to journalArticle

Wu, CC, Ko, FH, Yang, WL, You, HC, Liu, FK, Yeh, CC, Liu, PL, Tung, CK & Cheng, CH 2010, 'A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping', IEEE Electron Device Letters, vol. 31, no. 7, 5466227, pp. 746-748. https://doi.org/10.1109/LED.2010.2048193
Wu, Chi Chang ; Ko, Fu Hsiang ; Yang, Wen Luh ; You, Hsin Chiang ; Liu, Fu Ken ; Yeh, Chen Chih ; Liu, Pin Lin ; Tung, Chiou Kou ; Cheng, Ching Hwa. / A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 7. pp. 746-748.
@article{54d5d10ef3094c9fbb354612e0281a54,
title = "A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping",
abstract = "A new solgel-derived TixZrySizO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 106 s are observed as 8{\%}, 13{\%}, and 21{\%} window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.",
keywords = "Flash memory, hole trapping, nanocrystal (NC), sol-gel",
author = "Wu, {Chi Chang} and Ko, {Fu Hsiang} and Yang, {Wen Luh} and You, {Hsin Chiang} and Liu, {Fu Ken} and Yeh, {Chen Chih} and Liu, {Pin Lin} and Tung, {Chiou Kou} and Cheng, {Ching Hwa}",
year = "2010",
month = "7",
doi = "10.1109/LED.2010.2048193",
language = "English",
volume = "31",
pages = "746--748",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - A robust data retention characteristic of SolGel-derived nanocrystal memory by hot-hole trapping

AU - Wu, Chi Chang

AU - Ko, Fu Hsiang

AU - Yang, Wen Luh

AU - You, Hsin Chiang

AU - Liu, Fu Ken

AU - Yeh, Chen Chih

AU - Liu, Pin Lin

AU - Tung, Chiou Kou

AU - Cheng, Ching Hwa

PY - 2010/7

Y1 - 2010/7

N2 - A new solgel-derived TixZrySizO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 106 s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.

AB - A new solgel-derived TixZrySizO nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the solgel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 ± 0.21 V, and long retention times obtained from extrapolation up to 106 s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 °C, 85 °C, and 125 °C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.

KW - Flash memory

KW - hole trapping

KW - nanocrystal (NC)

KW - sol-gel

UR - http://www.scopus.com/inward/record.url?scp=77954145053&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954145053&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2048193

DO - 10.1109/LED.2010.2048193

M3 - Article

AN - SCOPUS:77954145053

VL - 31

SP - 746

EP - 748

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

M1 - 5466227

ER -