A novel ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory

Sheng Hsien Liu, Wen Luh Yang, Chi Chang Wu, Tien Sheng Chao

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A novel technique combination of ion bombardment (IB) and NH 3 plasma treatment (PT) has been presented to yield a highly effective charge storage layer for Si/SiO2/Si3N4/SiO2/Si (SONOS)-type nonvolatile memory applications. The IB technique creates additional trap sites within the charge storage layer strikingly to enhance the charge trapping/detrapping efficiency of the storage layer, and the NH 3 PT passivates shallow trap sites significantly to improve reliability characteristics. The distribution of trap sites corresponding with various energy levels is clearly described by discharge-based multipulse analysis. As compared with the control sample (without IB and NH 3 PT), the ion-bombarded and NH 3-plasma- passivated memory device has faster program/erase speeds and larger memory window. In addition, the competent reliability properties of the ion-bombarded and NH 3-plasma-passivated memory, such as good endurance, long data retention, and acceptable disturbance, were also demonstrated in this letter.

Original languageEnglish
Article number6280616
Pages (from-to)1393-1395
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number10
DOIs
Publication statusPublished - 2012

Fingerprint

Ions
Plasmas
Data storage equipment
Ion bombardment
Charge trapping
Electron energy levels
Durability
silicon nitride

Keywords

  • Discharge-based multipulse (DMP)
  • Flash memory
  • ion bombardment (IB)
  • metal/Al2O3/Si3N4/SiO2/Si (MANOS)
  • NH plasma treatment (PT)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

A novel ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory. / Liu, Sheng Hsien; Yang, Wen Luh; Wu, Chi Chang; Chao, Tien Sheng.

In: IEEE Electron Device Letters, Vol. 33, No. 10, 6280616, 2012, p. 1393-1395.

Research output: Contribution to journalArticle

Liu, Sheng Hsien ; Yang, Wen Luh ; Wu, Chi Chang ; Chao, Tien Sheng. / A novel ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory. In: IEEE Electron Device Letters. 2012 ; Vol. 33, No. 10. pp. 1393-1395.
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