A novel ion-bombarded and plasma-passivated charge storage layer for SONOS-type nonvolatile memory

Sheng Hsien Liu, Wen Luh Yang, Chi Chang Wu, Tien Sheng Chao

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9 Citations (Scopus)


A novel technique combination of ion bombardment (IB) and NH 3 plasma treatment (PT) has been presented to yield a highly effective charge storage layer for Si/SiO2/Si3N4/SiO2/Si (SONOS)-type nonvolatile memory applications. The IB technique creates additional trap sites within the charge storage layer strikingly to enhance the charge trapping/detrapping efficiency of the storage layer, and the NH 3 PT passivates shallow trap sites significantly to improve reliability characteristics. The distribution of trap sites corresponding with various energy levels is clearly described by discharge-based multipulse analysis. As compared with the control sample (without IB and NH 3 PT), the ion-bombarded and NH 3-plasma- passivated memory device has faster program/erase speeds and larger memory window. In addition, the competent reliability properties of the ion-bombarded and NH 3-plasma-passivated memory, such as good endurance, long data retention, and acceptable disturbance, were also demonstrated in this letter.

Original languageEnglish
Article number6280616
Pages (from-to)1393-1395
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
Publication statusPublished - 2012



  • Discharge-based multipulse (DMP)
  • Flash memory
  • ion bombardment (IB)
  • metal/Al2O3/Si3N4/SiO2/Si (MANOS)
  • NH plasma treatment (PT)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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