A hot hole-programmed and low-temperature-formed SONOS flash memory

Yuan Ming Chang, Wen Luh Yang, Sheng Hsien Liu, Yu Ping Hsiao, Jia Yo Wu, Chi-Chang Wu

Research output: Contribution to journalArticle

Abstract

In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol-gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 106 s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the TixZrySizO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol-gel film.

Original languageEnglish
Pages (from-to)340
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
Publication statusPublished - 2013

Fingerprint

Flash memory
flash
Data storage equipment
Sol-gels
tetrachlorides
Annealing
trapping
Spin coating
Zirconium
charge efficiency
Temperature
silicon tetrachloride
gels
Electric properties
Titanium
annealing
Silicon
coating
titanium
electrical properties

Keywords

  • Sol-gel
  • Hole trapping
  • Flash memory

Cite this

A hot hole-programmed and low-temperature-formed SONOS flash memory. / Chang, Yuan Ming; Yang, Wen Luh; Liu, Sheng Hsien; Hsiao, Yu Ping; Wu, Jia Yo; Wu, Chi-Chang.

In: Nanoscale Research Letters, Vol. 8, No. 1, 2013, p. 340.

Research output: Contribution to journalArticle

Chang, Yuan Ming ; Yang, Wen Luh ; Liu, Sheng Hsien ; Hsiao, Yu Ping ; Wu, Jia Yo ; Wu, Chi-Chang. / A hot hole-programmed and low-temperature-formed SONOS flash memory. In: Nanoscale Research Letters. 2013 ; Vol. 8, No. 1. pp. 340.
@article{a70aabcc7c8a4813be15abd66649cf7f,
title = "A hot hole-programmed and low-temperature-formed SONOS flash memory",
abstract = "In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol-gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 106 s with only 5{\%} (at 85°C) and 10{\%} (at 125°C) charge loss. The barrier height of the TixZrySizO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol-gel film.",
keywords = "Sol-gel, Hole trapping, Flash memory",
author = "Chang, {Yuan Ming} and Yang, {Wen Luh} and Liu, {Sheng Hsien} and Hsiao, {Yu Ping} and Wu, {Jia Yo} and Chi-Chang Wu",
year = "2013",
doi = "10.1186/1556-276X-8-340",
language = "English",
volume = "8",
pages = "340",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",
number = "1",

}

TY - JOUR

T1 - A hot hole-programmed and low-temperature-formed SONOS flash memory

AU - Chang, Yuan Ming

AU - Yang, Wen Luh

AU - Liu, Sheng Hsien

AU - Hsiao, Yu Ping

AU - Wu, Jia Yo

AU - Wu, Chi-Chang

PY - 2013

Y1 - 2013

N2 - In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol-gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 106 s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the TixZrySizO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol-gel film.

AB - In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol-gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 106 s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the TixZrySizO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol-gel film.

KW - Sol-gel

KW - Hole trapping

KW - Flash memory

U2 - 10.1186/1556-276X-8-340

DO - 10.1186/1556-276X-8-340

M3 - Article

VL - 8

SP - 340

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

SN - 1931-7573

IS - 1

ER -