A GaAs non-volatile memory

D. L. Harrington; W. C. Gee; J. F. Fay; I. S. Leybovich; I. K. Naik; T. P. Nicalek; B. P. Maderic; L. E. Sanchez; M. W. Stoddard; G. L. Troeger; S. H. Watanabe; S. Y. Wu; J. K. Notthoff

A GaAs non-volatile memory

D. L. Harrington, W. C. Gee, J. F. Fay, I. S. Leybovich, I. K. Naik, T. P. Nicalek, B. P. Maderic, L. E. Sanchez, M. W. Stoddard, G. L. Troeger, S. H. Watanabe, S. Y. Wu, J. K. Notthoff

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.

Original language	English
Title of host publication	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Publisher	Publ by IEEE
Pages	75-78
Number of pages	4
ISBN (Print)	078030196X
Publication status	Published - Jan 1 1992
Event	13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA Duration: Oct 20 1991 → Oct 23 1991

Conference

Conference	13th Annual GaAs IC Symposium Technical Digest
City	Monterey, CA, USA
Period	10/20/91 → 10/23/91

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Harrington, DL, Gee, WC, Fay, JF, Leybovich, IS, Naik, IK, Nicalek, TP, Maderic, BP, Sanchez, LE, Stoddard, MW, Troeger, GL, Watanabe, SH, Wu, SY & Notthoff, JK 1992, A GaAs non-volatile memory. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, pp. 75-78, 13th Annual GaAs IC Symposium Technical Digest, Monterey, CA, USA, 10/20/91.

@inproceedings{e943763c690748baa578f4550705ef2a,

title = "A GaAs non-volatile memory",

abstract = "A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.",

author = "Harrington, {D. L.} and Gee, {W. C.} and Fay, {J. F.} and Leybovich, {I. S.} and Naik, {I. K.} and Nicalek, {T. P.} and Maderic, {B. P.} and Sanchez, {L. E.} and Stoddard, {M. W.} and Troeger, {G. L.} and Watanabe, {S. H.} and Wu, {S. Y.} and Notthoff, {J. K.}",

year = "1992",

month = jan,

day = "1",

language = "English",

isbn = "078030196X",

pages = "75--78",

booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",

publisher = "Publ by IEEE",

note = "13th Annual GaAs IC Symposium Technical Digest ; Conference date: 20-10-1991 Through 23-10-1991",

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TY - GEN

T1 - A GaAs non-volatile memory

AU - Harrington, D. L.

AU - Gee, W. C.

AU - Fay, J. F.

AU - Leybovich, I. S.

AU - Naik, I. K.

AU - Nicalek, T. P.

AU - Maderic, B. P.

AU - Sanchez, L. E.

AU - Stoddard, M. W.

AU - Troeger, G. L.

AU - Watanabe, S. H.

AU - Wu, S. Y.

AU - Notthoff, J. K.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.

AB - A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.

UR - http://www.scopus.com/inward/record.url?scp=0026712652&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026712652&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0026712652

SN - 078030196X

SP - 75

EP - 78

BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

PB - Publ by IEEE

T2 - 13th Annual GaAs IC Symposium Technical Digest

Y2 - 20 October 1991 through 23 October 1991

ER -

A GaAs non-volatile memory

Abstract

Conference

ASJC Scopus subject areas

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