A GaAs non-volatile memory

D. L. Harrington, W. C. Gee, J. F. Fay, I. S. Leybovich, I. K. Naik, T. P. Nicalek, B. P. Maderic, L. E. Sanchez, M. W. Stoddard, G. L. Troeger, S. H. Watanabe, S. Y. Wu, J. K. Notthoff

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A GaAs non-volatile memory that retains data without power by using a ferroelectric capacitor memory storage element has been developed. A complete 2K/4K bit ferroelectric random access memory (FERRAM) and two test modules have been fabricated. Initial results on the test modules and the FERRAM have demonstrated the feasibility of this approach. This is believed to be the first demonstration of a non-volatile memory circuit using GaAs technology.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PublisherPubl by IEEE
Pages75-78
Number of pages4
ISBN (Print)078030196X
Publication statusPublished - Jan 1 1992
Event13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA
Duration: Oct 20 1991Oct 23 1991

Conference

Conference13th Annual GaAs IC Symposium Technical Digest
CityMonterey, CA, USA
Period10/20/9110/23/91

Fingerprint

Data storage equipment
Ferroelectric materials
Capacitors
Demonstrations
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Harrington, D. L., Gee, W. C., Fay, J. F., Leybovich, I. S., Naik, I. K., Nicalek, T. P., ... Notthoff, J. K. (1992). A GaAs non-volatile memory. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 75-78). Publ by IEEE.

A GaAs non-volatile memory. / Harrington, D. L.; Gee, W. C.; Fay, J. F.; Leybovich, I. S.; Naik, I. K.; Nicalek, T. P.; Maderic, B. P.; Sanchez, L. E.; Stoddard, M. W.; Troeger, G. L.; Watanabe, S. H.; Wu, S. Y.; Notthoff, J. K.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, 1992. p. 75-78.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Harrington, DL, Gee, WC, Fay, JF, Leybovich, IS, Naik, IK, Nicalek, TP, Maderic, BP, Sanchez, LE, Stoddard, MW, Troeger, GL, Watanabe, SH, Wu, SY & Notthoff, JK 1992, A GaAs non-volatile memory. in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, pp. 75-78, 13th Annual GaAs IC Symposium Technical Digest, Monterey, CA, USA, 10/20/91.
Harrington DL, Gee WC, Fay JF, Leybovich IS, Naik IK, Nicalek TP et al. A GaAs non-volatile memory. In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE. 1992. p. 75-78
Harrington, D. L. ; Gee, W. C. ; Fay, J. F. ; Leybovich, I. S. ; Naik, I. K. ; Nicalek, T. P. ; Maderic, B. P. ; Sanchez, L. E. ; Stoddard, M. W. ; Troeger, G. L. ; Watanabe, S. H. ; Wu, S. Y. ; Notthoff, J. K. / A GaAs non-volatile memory. Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, 1992. pp. 75-78
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AU - Naik, I. K.

AU - Nicalek, T. P.

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AU - Sanchez, L. E.

AU - Stoddard, M. W.

AU - Troeger, G. L.

AU - Watanabe, S. H.

AU - Wu, S. Y.

AU - Notthoff, J. K.

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