A Fully Transparent Resistive Memory for Harsh Environments

Po Kang Yang, Chih Hsiang Ho, Der Hsien Lien, José Ramón Durán Retamal, Chen Fang Kang, Kuan Ming Chen, Teng Han Huang, Yueh Chung Yu, Chih I. Wu, Jr Hau He

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Abstract

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10 4 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

Original languageEnglish
Article number15087
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - Oct 12 2015
Externally publishedYes

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ASJC Scopus subject areas

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Cite this

Yang, P. K., Ho, C. H., Lien, D. H., Durán Retamal, J. R., Kang, C. F., Chen, K. M., Huang, T. H., Yu, Y. C., Wu, C. I., & He, J. H. (2015). A Fully Transparent Resistive Memory for Harsh Environments. Scientific Reports, 5, [15087]. https://doi.org/10.1038/srep15087