A Fully Transparent Resistive Memory for Harsh Environments

Po Kang Yang, Chih Hsiang Ho, Der Hsien Lien, José Ramón Durán Retamal, Chen Fang Kang, Kuan Ming Chen, Teng Han Huang, Yueh Chung Yu, Chih I. Wu, Jr Hau He

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10 4 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

Original languageEnglish
Article number15087
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - Oct 12 2015
Externally publishedYes

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hafnium oxides
proton irradiation
moisture
partial pressure
humidity
degradation
cycles
oxygen

ASJC Scopus subject areas

  • General

Cite this

Yang, P. K., Ho, C. H., Lien, D. H., Durán Retamal, J. R., Kang, C. F., Chen, K. M., ... He, J. H. (2015). A Fully Transparent Resistive Memory for Harsh Environments. Scientific Reports, 5, [15087]. https://doi.org/10.1038/srep15087

A Fully Transparent Resistive Memory for Harsh Environments. / Yang, Po Kang; Ho, Chih Hsiang; Lien, Der Hsien; Durán Retamal, José Ramón; Kang, Chen Fang; Chen, Kuan Ming; Huang, Teng Han; Yu, Yueh Chung; Wu, Chih I.; He, Jr Hau.

In: Scientific Reports, Vol. 5, 15087, 12.10.2015.

Research output: Contribution to journalArticle

Yang, PK, Ho, CH, Lien, DH, Durán Retamal, JR, Kang, CF, Chen, KM, Huang, TH, Yu, YC, Wu, CI & He, JH 2015, 'A Fully Transparent Resistive Memory for Harsh Environments', Scientific Reports, vol. 5, 15087. https://doi.org/10.1038/srep15087
Yang PK, Ho CH, Lien DH, Durán Retamal JR, Kang CF, Chen KM et al. A Fully Transparent Resistive Memory for Harsh Environments. Scientific Reports. 2015 Oct 12;5. 15087. https://doi.org/10.1038/srep15087
Yang, Po Kang ; Ho, Chih Hsiang ; Lien, Der Hsien ; Durán Retamal, José Ramón ; Kang, Chen Fang ; Chen, Kuan Ming ; Huang, Teng Han ; Yu, Yueh Chung ; Wu, Chih I. ; He, Jr Hau. / A Fully Transparent Resistive Memory for Harsh Environments. In: Scientific Reports. 2015 ; Vol. 5.
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