A CMOS-compatible poly-si nanowire device with hybrid sensor/memory characteristics for system-on-chip applications

Min Cheng Chen; Hao Yu Chen; Chia Yi Lin; Chao Hsin Chien; Tsung Fan Hsieh; Jim Tong Horng; Jian Tai Qiu; Chien Chao Huang; Chia Hua Ho; Fu Liang Yang

doi:10.3390/s120403952

A CMOS-compatible poly-si nanowire device with hybrid sensor/memory characteristics for system-on-chip applications

Min Cheng Chen, Hao Yu Chen, Chia Yi Lin, Chao Hsin Chien, Tsung Fan Hsieh, Jim Tong Horng, Jian Tai Qiu, Chien Chao Huang, Chia Hua Ho, Fu Liang Yang

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically V_th-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady V_th adjustment window (>2 V Programming/ Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.

Original language	English
Pages (from-to)	3952-3963
Number of pages	12
Journal	Sensors
Volume	12
Issue number	4
DOIs	https://doi.org/10.3390/s120403952
Publication status	Published - Apr 2012
Externally published	Yes

Keywords

Nano-sensor fabrication
Nanowire FET
Nonvolatile memories
Semiconductive sensors

ASJC Scopus subject areas

Analytical Chemistry
Biochemistry
Atomic and Molecular Physics, and Optics
Instrumentation
Electrical and Electronic Engineering

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10.3390/s120403952

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abstract = "This paper reports a versatile nano-sensor technology using {"}top-down{"} poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/ Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.",

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author = "Chen, {Min Cheng} and Chen, {Hao Yu} and Lin, {Chia Yi} and Chien, {Chao Hsin} and Hsieh, {Tsung Fan} and Horng, {Jim Tong} and Qiu, {Jian Tai} and Huang, {Chien Chao} and Ho, {Chia Hua} and Yang, {Fu Liang}",

year = "2012",

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AU - Chen, Min Cheng

AU - Chen, Hao Yu

AU - Lin, Chia Yi

AU - Chien, Chao Hsin

AU - Hsieh, Tsung Fan

AU - Horng, Jim Tong

AU - Qiu, Jian Tai

AU - Huang, Chien Chao

AU - Ho, Chia Hua

AU - Yang, Fu Liang

PY - 2012/4

Y1 - 2012/4

N2 - This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/ Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.

AB - This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/ Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.

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KW - Semiconductive sensors

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A CMOS-compatible poly-si nanowire device with hybrid sensor/memory characteristics for system-on-chip applications

Abstract

Keywords

ASJC Scopus subject areas

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