A CMOS-compatible poly-si nanowire device with hybrid sensor/memory characteristics for system-on-chip applications

Min Cheng Chen, Hao Yu Chen, Chia Yi Lin, Chao Hsin Chien, Tsung Fan Hsieh, Jim Tong Horng, Jian Tai Qiu, Chien Chao Huang, Chia Hua Ho, Fu Liang Yang

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This paper reports a versatile nano-sensor technology using "top-down" poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/ Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.

Original languageEnglish
Pages (from-to)3952-3963
Number of pages12
JournalSensors
Volume12
Issue number4
DOIs
Publication statusPublished - Apr 2012
Externally publishedYes

Keywords

  • Nano-sensor fabrication
  • Nanowire FET
  • Nonvolatile memories
  • Semiconductive sensors

ASJC Scopus subject areas

  • Analytical Chemistry
  • Biochemistry
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Electrical and Electronic Engineering

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  • Cite this

    Chen, M. C., Chen, H. Y., Lin, C. Y., Chien, C. H., Hsieh, T. F., Horng, J. T., Qiu, J. T., Huang, C. C., Ho, C. H., & Yang, F. L. (2012). A CMOS-compatible poly-si nanowire device with hybrid sensor/memory characteristics for system-on-chip applications. Sensors, 12(4), 3952-3963. https://doi.org/10.3390/s120403952