A 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire for use in bioelectronic probing

Min Cheng Chen, Chang Hsien Lin, Chia Yi Lin, Hsiao Chain Chen, Ta Hsien Lee, Mu Yi Hua, Jian Tai Qiu, Chiahua Ho, Fu Liang Yang

Research output: Contribution to journalArticle

Abstract

Using a self-aligned sidewall microcrystalline-silicon (μ-Si) dual channel, comprising a sub-50-nm channel width, a novel 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire device was fabricated on top metal using a tungsten gate-stack and trilayered oxide/nitride/oxide gate dielectric. The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that μ-Si surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications.

Original languageEnglish
Article number6740855
Pages (from-to)897-901
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume61
Issue number3
DOIs
Publication statusPublished - Mar 2014
Externally publishedYes

Keywords

  • Back end of line (BEOL) technology
  • field-effect transistor (FET)
  • lab on chip
  • nanosensor fabrication
  • nanowire semiconductive sensors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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